BDV65B transistor equivalent, npn transistor.
* High DC Current Gain − HFE = 1000 (min) @ 5 Adc
* Monolithic Construction with Built−in Base Emitter Shunt Resistors
* These are Pb−Free Devices*
MAXIMUM R.
Features
* High DC Current Gain − HFE = 1000 (min) @ 5 Adc
* Monolithic Construction with Built−in Base Emitter.
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